p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 1 5 00 v n - c hannel mosfet v oltage 5 0 0 v c urrent 8 a ito - 220ab - f to - 220ab to - 252aa to - 251aa f eatures ? r ds(on) , v gs @10v,i d @ 4 a< 0.9 ? high switching speed ? impr oved dv/dt capability ? low gate charge ? low reverse transfer capacitance ? lead free in compliance wit h eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case: to - 251aa , to - 252aa ,to - 220ab, ito - 220ab - f p ackage ? terminals : solderable per mil - std - 750, method 2026 ? to - 251aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 252aa approx. weight : 0.0104 ounces, 0.297 grams ? to - 220ab approx. weight : 0.06 7 ounces, 1. 9 grams ? ito - 220ab - f approx. weight : 0.068 ounces, 2 grams maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted) parameter symbol to - 251aa to - 220ab ito - 220ab - f to - 252aa units drain - source voltage v ds 500 v gate - source voltage v gs + 30 v continuous drain current i d 8 a p ulsed drain current i dm 32 a single pulse avalanche energy (note 1 ) e as 512 mj power dissipation t c =25 o c p d 130 134 49 130 w derate above 25 o c 1.04 1.07 0.39 1.04 w/ o c operating junction and storage temperature range t j ,t stg - 55~150 o c typical t hermal resistance - junction to case - j unction to ambient r jc ja 0.96 110 0.93 62.5 2.55 120 0.96 110 o c /w ? limited only by maximum junction temperature
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condi tion min. typ. max. units static drain - source breakdown voltage bv dss v gs =0v,i d =250ua 5 00 - - v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2 2.96 4 v drain - source on - state resistance r ds(on) v gs =10v,i d = 4 a - 0. 8 0.9 dss v ds = 5 00v,v gs =0v - 0.02 1 ua gate - source leakage current i gss v gs = + 30v,v ds =0v - + 10 + 100 na diode forward voltage v sd i s = 8 a,v gs =0v - 0.8 9 1.4 v dynamic (note 4 ) total gate charge q g v ds = 400 v, i d = 8 a, v gs =10v (note 2,3 ) - 1 6.2 - nc gate - source c harge q gs - 5. 2 - gate - drain charge q gd - 5.2 - input capacitance ciss v ds =25v, v gs =0v, f=1.0mhz - 826 - pf output capacitance coss - 1 1 4 - reverse transfer capacitance crss - 0. 7 - turn - on delay time td (on) v dd = 250 v, i d = 8 a, r g = 25 (note 2,3 ) - 14 - ns turn - on rise time t r - 30 - turn - off delay time td (off) - 36 - turn - off fall time t f - 29 - drain - source diode maximum continuous drain - source diode forward current i s --- - - 8 a maximum pulsed drain - source diode forw ard current i sm --- - - 32 a reverse recovery time trr v gs =0v, i s = 8 a di f / dt=100a/us (note 2 ) - 4 53 - ns reverse recovery charge qrr - 2.8 5 - uc notes : 1. l=30mh, i as = 5.7 a, v dd = 5 0 v, r g =2 5 ohm, starting t j =25 o c 2. pulse width < 300us, duty cycle < 2% 3. essentially independent of operating temperature typical characteristics . 4. guaranteed by design, not subject to product ion testing
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 3 t ypical characteristic curves fig.1 output characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. d rain current fig. 4 on - resistsnce vs. junction temperature fig. 5 capacitance vs. drain - source voltage fig. 6 body dlode characterlslcs
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 4 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 breakdown voltage var iation vs.temperature fig. 9 threshold voltage variation with temperature fig. 10 maximum safe operating area fig. 11 maximum safe operating area fig. 1 2 maximum safe operating area
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 5 t ypical characteristic curves fig. 13 pju/pjd n ormalized transient thermal impedance vs. pulse width fig. 14 pjp 8 na 5 0 normalized transient thermal impedance vs. pulse width fig. 15 pjf 8 na 5 0 normalized transient thermal impedance vs. pulse width
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 6 packaging information . ito - 220ab - f dimension u nit: mm t o - 220ab dimension u nit: mm to - 252aa dimension u nit: mm to - 251aa dimension u nit: mm
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 7 p art n o packing code v ersion part n o packing code package type packing type marking ver sion pj u8na5 0 _t0_00001 to - 251aa 80pcs / tube u8na50 halogen free pjd8na50_l2_00001 to - 252aa 3,000pcs / 13
p p j u 8 na50 / pj d 8 na50 / pj p 8 na50 / pj f 8 na50 march 10,2014 - rev.00 page 8 discl aimer
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